FUNCTIONAL CHARACTERISTICS OF A FIELD TRANSISTOR WITH A CONTROL p-n-JUNCTION UNDER DIFFERENT POWER-ON MODES

Abstract

The functional characteristics of junction field-effect transistor were researched at different bias polarities and schemes of inclusion. It was established experimentally that the maximum value of drain current when two transistors were connected varies in a quadratic law with the radiation intensity, and photosensitivity becomes more than in a discrete structure. In this case the maximum values of drain current corresponding to the light currents of discrete transistors by forward voltage vary in a quadratic law and they are a continuation of the transfer characteristics in dark, which makes possible their use as photodetectors in electronic circuits. In the series-connected field-effect transistors modulated junction, as in the two-barrier structures, controls the parameters of the second junction due to redistribution of the voltage applied from an external power source.