FEATURES AMPLIFYING PROPERTIES OF A FIELD EFFECT TRANSISTOR IN THE CIRCUIT WITH DYNAMIC LOAD

Section: Articles Published Date: 2023-04-05 Pages: 93-98 Views: 113 Downloads: 64

Authors

  • Bekzod M. Kamanov Senior Lecturer Nurafshon Branch of Tashkent University of Information Technologies named after Al-Khorazmi Nurafshon, Uzbekistan Е-mail: bekzod.kamanov@bk.ru
  • Olmos G. Kodirov Samarkand branch of Tashkent State Agrarian University Samarkand, Uzbekistan E-mail: kodirov@mail.ru
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Abstract

In the field-effect transistor with dynamic load at bipolar connection mode, when an electric field is applied to the drain-gate junction (source connected to the gate) can be obtained two orders of magnitude higher gain in contrast to the known circuit with a common source. The closer the operating point to the pinch-off of the channel, the higher the voltage gain. In this case the maximum values of drain current corresponding to the light currents of discrete transistors by forward voltage vary in a quadratic law and they are a continuation of the transfer characteristics in dark, which makes possible their use as photodetectors in electronic circuits. In the series-connected field-effect transistors modulated junction, as in the two-barrier structures, controls the parameters of the second junction due to redistribution of the voltage applied from an external power source.

Keywords

field-effect transistor, dynamic load, gain