ON DETERMINING THE CONCENTRATION OF OXYGEN PRECIPITATION IN SINGLE-CRYSTALLINE SILICON UNDER HIGH HEAT TREATMENTS
Abstract
This paper investigates the formation of oxygen precipitates in Czochralski-grown (CZ) silicon wafers and their thermal stability during high-temperature manufacturing steps. The study focuses on the dissolution dynamics of oxygen nuclei formed at 700° and 800° C when subjected to subsequent heat treatments ranging from 950° and 1200° C. Experimental data demonstrate that the stability of oxygen clusters is fundamentally determined by their size relative to the critical radius at high temperatures. It was observed that high processing temperatures exert a limiting effect on the density of internal gettering sites, leading to an exponential decay of precipitate concentration as temperature increases. The research establishes an empirical relationship between the maximum precipitate density and the reciprocal of the process temperature. These findings are crucial for optimizing thermal cycles in semiconductor device processing to ensure effective metallic impurity gettering. The results highlight the competition between precipitate growth and dissolution mechanisms in the silicon matrix.
Keywords
Monocrystalline silicon, internal gettering, oxygen precipitates, nucleation, thermal annealing, cluster dissolution, critical radius, Czochralski silicon, microelectronics, defect density, interstitial oxygen, gettering efficiency, solar cells, semiconductors.How to Cite
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